1/10 march 2004 . stb100nf04l STB100NF04L-1 n-channel 40v - 0.0036 ? - 100a d2pak/i2pak stripfet? ii power mosfet typical r ds (on) = 0.0036 ? low threshold drive 100% avalanche tested logic level device description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications high current, high switching speed motor control, audio amplifiers dc-dc & dc-ac converters solenoid and relay drivers type v dss r ds(on) i d stb100nf04l STB100NF04L-1 40 v 40 v <0.0042 ? <0.0042 ? 100 a 100 a i 2 pak to-262 1 2 3 1 3 d 2 pak to-263 (suffix ?t4?) internal schematic diagram ordering information absolute maximum ratings ( ?) pulse width limited by safe operating area. (*) current limited by package (1) i sd 100a, di/dt 240a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 50a, v dd = 30 v sales type marking package packaging stb100nf04lt4 b100nf04l d 2 pak tape & reel STB100NF04L-1 b100nf04l i 2 pak tube symbol parameter value unit v ds drain-source voltage (v gs = 0) 40 v v dgr drain-gate voltage (r gs = 20 k ? ) 40 v v gs gate- source voltage 16 v i d (*) drain current (continuous) at t c = 25c 100 a i d drain current (continuous) at t c = 100c 100 a i dm ( ?) drain current (pulsed) 400 a p tot total dissipation at t c = 25c 300 w derating factor 2.0 w/c dv/dt (1) peak diode recovery voltage slope 3.6 v/ns e as (2) single pulse avalanche energy 1.4 j t stg storage temperature -55 to 175 c t j operating junction temperature
stb100nf04l/-1 2/10 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb t j thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max typ 0.5 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 16 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 1v r ds(on) static drain-source on resistance v gs = 10 v i d = 50 a v gs = 4.5 v i d = 50 a 0.0036 0.0040 0.0042 0.0065 ? ? symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d =20 a 50 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 6400 1300 190 pf pf pf
3/10 stb100nf04l/-1 switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ?) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 20 v i d = 50 a r g =4.7 ? v gs = 4.5 v (resistive load, figure 3) 37 270 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 32v i d = 100a v gs = 4.5v 72 20 28.5 90 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 20 v d = 50 a r g =4.7 ?, v gs = 4.5 v (resistive load, figure 3) 90 80 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v clamp = 32 v i d = 100 a r g =4.7 ?, v gs = 4.5 v (inductive load, figure 5) 85 125 160 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 100 400 a a v sd (*) forward on voltage i sd = 100a v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 100 a di/dt = 100a/s v dd = 20 v t j = 150c (see test circuit, figure 5) 88 240 5.5 ns nc a electrical characteristics (continued) thermal impedance safe operating area
stb100nf04l/-1 4/10 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/10 stb100nf04l/-1 normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage temperature . . .
stb100nf04l/-1 6/10 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/10 stb100nf04l/-1 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 8 0 8 d 2 pak mechanical data
stb100nf04l/-1 8/10 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data
9/10 stb100nf04l/-1 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r 50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix ?t4?)* d 2 pak footprint tape mechanical data
stb100nf04l/-1 10/10 i nformation furnished is believed to be accurate and reliable. ho wever, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is registered trademark of stmicroelectronics all other names are the property of their respective owners. ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco -singapore - spain - sweden - switzerland - united kingdom - united states. www.st.com
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